Akhmadi Surawijaya 1,2* Isa Anshori2, Asep Rohiman2, and Irman Idris1,2
1School of Electrical Engineering and Informatics, Bandung Institute of Technology
2 Microelectronics Center, Bandung Institute of Technology
Jalan Ganesha 10, Bandung 40132 – Indonesia
Silicon Nanowires (SiNWs) are promising 1D semiconductor nanostructures which are being intensively researched in many countries due to its potential applications in many fields such as MOSFET channel and/or wiring, solar cells, chemical and biological sensors. We used gold nanoparticles (AuNPs) which has low eutectic temperature as a metal catalyst in Vapor Liquid Solid (VLS) method to grow SiNW on top of Silicon <100> substrates. AuNPs were synthesized using Turkevich method and then deposited on the Silicon substrate using dip coating method. To grow SiNWs, we placed the sample inside a Low Pressure Chemical Vapor Deposition (LPCVD) reactor with temperature around the Si-Au eutectic temperature (~500oC), after temperature is stabilized we flowed Silane (SiH4) gas diluted in Nitrogen gas to the chamber for several minutes. The sample were observed using Scanning Electron Microscope in secondary electron mode to confirm the grown SiNWs. We found that the SiNWs has been grown with AuNPs as the nanowire cap on the top of it. Bending and kinking on the growth direction shows that growth condition is not optimized yet and is related with the Silane gas flow. SiNWs have average length around 500-800 nm with diameter corresponding to its gold catalyst. By optimizing the growth parameter, we aim to obtain vertical SiNWs that can be used for functional devices such as chemical sensors.
Keywords: Gold nanoparticles, Silicon Nanowires,Vapor-Liquid-Solid, LPCVD