A. Surawijaya, I. Anshori , A.Rohiman and I. Idris
School of Electrical Engineering and Informatics, Bandung Institute of Technology, Indonesia
Silicon Nanowire (Si-NW) is one of the promising nanodevices which attract many attentions due to its potential applications in many fields such as memory devices, battery, solar cell, chemical and biological sensors. Our lab has begun research into nanofabrication and nanodevices with SiNW as the main subject. We used Vapour-Liquid-Solid (VLS) method to grow SiNW on silicon <100> with gold nanoparticles (Au-np) as catalyst. The focus on the synthesizes of the Au-np as the metal catalyst for the SiNW growth and also on the growth condition of the SiNW.
We synthesized Au-np using Turkevich method which involved reducing Gold Chloride solution with Sodium Citrate to produce gold colloids with Au-np size ranging from 20 to 40 nm. Au-np were then deposited on top of Silicon surface and SiNW were grown in Low Pressure Chemical Vapor Deposition (LPCVD) at the Silicon-Gold eutectic temperature ~500oC with Silane (SiH4) gas as a precursor diluted in Nitrogen gas. By using Scanning Electron Microscope (SEM), SiNW with varying length between 500-800 nm with diameter nearly equal to its gold catalyst were observed on the Silicon surface. Several growth defects such as kinking and bending in the SiNW growth directions were observed which related with the flow of the Silane gas during the growth process.
SiNW has been successfully grown in our lab using VLS method and we continue our work to perfecting the growth condition and also implementing SiNW into functional devices such chemical and biological sensors.
Keywords: Silicon Nanowire, Gold Nanoparticle, Vapor-Liquid-Solid